Wide-bandwidth charge sensitivity with a radio-frequency field-effect transistor
نویسندگان
چکیده
منابع مشابه
Wide-bandwidth charge sensitivity with a radio-frequency field-effect transistor
We demonstrate high-speed charge detection at room temperature with single-electron resolution by using a radio-frequency field-effect transistor (RF-FET). The RF-FET combines a nanometerscale silicon FET with an impedance-matching circuit composed of an inductor and capacitor. Driving the RF-FET with a carrier signal at its resonance frequency, small signals at the transistor’s gate modulate t...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2013
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4822430